| 1. | Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
用光电导衰减法测量硅单晶中少数载流子的寿命 |
| 2. | Keywords : micro - gyroscope , silicon single crystal , three - axis angular - rate sensing , natural frequency and mode shapes
关键词：微型陀螺仪、矽单晶、三轴角速率感测、振动自然频率与模态。 |
| 3. | Testing of materials for use in semiconductor technology ; detection of crystal defects and inhomogeneities in silicon single crystals by x - ray topography
半导体工艺使用材料的检验.第1部分:用x射线外形测量 |
| 4. | Testing of materials for semiconductor technology - measurement of carrier lifetime in silicon single crystals - recombination carrier lifetime at low injection by photoconductivity method
半导体工艺材料的试验.硅单晶中载流子寿命的测量.用 |
| 5. | It was found that nitrogen increased the fracture strength of silicon single crystal . we consider that the nitrogen may change the shockley band on silicon surface and form complex to influence the fracture procedure
本文从硅材料的基本概念入手，阐述了硅单晶材料的脆性断裂、脆塑转变以及在热处理过程中的翘曲研究，并通过这三个部分进行实验。 |
| 6. | Therefore , it is desirable to investigate and enhance the mechanical property of silicon single crystal . in this paper , the fracture property of czochralshi ( cz ) and nitrogen - doped silicon ( ncz ) were investigated at room temperature by three - point bending method
尤其在当今随着硅片直径不断增大的情况下，提高硅片的机械强度，减少硅片损伤、翘曲、位错及其滑移等带来的损失变得十分重要。 |
